technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com n-channel mosfet qualified per mil-prf-19500/543 t4-lds-0182 rev. 1 (101484) page 1 of 5 devices levels 2n6766 2n6766t1 jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds 200 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 30 adc continuous drain current t c = +100c i d2 19 adc max. power dissipation t c = +25c p tl 150 (1) w drain to source on state resistance r ds(on) 0.085 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 1.2 w/c for t c > +25c (2) v gs = 10vdc, i d = 19a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 200 vdc gate-source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25ma, t j = +125c v ds v gs , i d = 0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 160v v gs = 0v, v ds = 200v, t j = +125c v gs = 0v, v ds = 160v, t j = +125c i dss1 i dss2 i dss3 25 1.0 0.25 adc madc madc static drain-source on -state resistance v gs = 10v, i d2 = 19a pulsed v gs = 10v, i d1 = 30a pulsed t j = +125c v gs = 10v, i d2 = 24a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.055 0.065 0.094 diode forward voltage v gs = 0v, i d1 = 30a pulsed v sd 1.9 vdc 2n6766 to-204ae (to-3) 2n6766t1 (to-254aa)
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0182 rev. 1 (101484) page 2 of 5 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: q g(on) q gs q gd nc on-state gate charge gate to source charge gate to drain charge v gs = 10v, i d = 30a v ds = 50v 115 22 60 switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 30a, v gs = 10vdc, gate drive impedance = 2.35 , v dd = 50vdc t d(on) t r t d(off) t f 35 190 170 130 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i f = 30a t rr 950 ns
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0182 rev. 1 (101484) page 3 of 5 package dimensions
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0182 rev. 1 (101484) page 4 of 5 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. these dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. when gauge is not used, measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the head er and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. these dimensions pertain to the 2n6764 and 2n6766 types. 6. these dimensions pertain to the 2n6768 and 2n6770 types. 7. mounting holes shall be deburred on the seating plane side. 8. drain is electrically connected to the case. 9. in accordance with asme y14. 5m, diameters are equivalent to x symbology. figure 1. physical dimensions of transistor types 2n6764 and 2n6766 to-204ae; for types 2n6768 and 2n6770, to-204aa dimensions ltr inches millimeters notes min max min max cd .875 22.23 ch .250 .360 6.35 9.15 hr .495 .525 12.57 13.3 hr 1 .131 .188 3.33 4.78 ht .060 .135 1.52 3.43 ld .057 .063 1.45 1.60 5 .038 .043 0.97 1.10 6 ll .312 .500 7.92 12.70 l 1 .050 1.27 3 mhd .151 .161 3.84 4.09 7 mhs 1.177 1.197 29.90 30.40 ps .420 .440 10.67 11.18 ps 1 .205 .225 5.21 5.72 s .655 .675 16.64 17.15
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0182 rev. 1 (101484) page 5 of 5 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. protrusion thickness of ceramic eyelets included in dimension ll. 4. all terminals are isolated from case. 5. in accordance with asme y14. 5m, diameters are equivalent to x symbology. figure 2. physical dimensions for 2n6764t1, 2n6766t1, 2n6768t1, and 2n6770t1 (to-254aa). dimensions ltr inches millimeters notes min max min max bl .535 .545 13.59 13.84 ch .249 .260 6.32 6.60 ld .035 .045 0.89 1.14 ll .510 .570 12.95 14.48 lo .150 bsc 3.81 bsc 3, 4 ls .150 bsc 3.81 bsc mhd .139 .149 3.53 3.78 mho .665 .685 16.89 17.40 tl .790 .800 20.07 20.32 tt .040 .050 1.02 1.27 tw .535 .545 13.59 13.84 term 1 drain term 2 source term 3 gate
|
